Doping concentration dependent piezoelectric behavior of Si:HfO₂ thin-films

Piezoelectric thin films are of current interest in science and industry for highly integrated nano-electro-mechanical-systems sensor devices. In this study, the dependence piezoelectric properties on doping concentration Si:HfO2 their crystallographic origin investigated. The with a thickness 20 nm various Si concentrations range 2.7–5.6 cat.% were examined. relationship between displacement remanent polarization is studied during wake-up from antiferroelectric-like pristine state until cycled ferroelectric state, which reveals an application-dependent optimal concentration. Furthermore, properties, as well relative permittivity, measured over wake-up, thus giving glimpse at underlying mechanism transition behavior to ferroelectric/piezoelectric one, revealing pre-existing polar phase that reorienting wake-up. samples show strong Hence, stoichiometry excellent parameter application-specific adjustment complementary metal–oxide–semiconductor compatible films.